MJ4032

PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The complementary NPN types are the MJ4033, MJ4034, MJ4035 Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings http://www.DataSheet4U.net/ Value MJ4030 MJ4031 MJ4032 MJ4030 MJ4031 MJ4032 MJ4030 MJ4031 MJ4032 -60 -80 -100 -60 -80 -100 -5.0 -16 -0.5 150 200 -65 to +200 Unit V IE=0 VCEO Collector-EmitterVoltage IB=0 V VEBO IC IB PT TJ Ts Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC=0 V A A W °C @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ PNP MJ4030 – MJ4031 – MJ4032 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100 mA, IB=0 VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 V, IB=0 VBE=-5.0 V, IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE=1.0 kΩ VCB=-100 V RBE=1.0 kΩ VCB=-60 V RBE=1.0 kΩ TC=150°C VCB=-80 V RBE=1.0 kΩ TC=150°C VCB=-100 V RBE=1.0 kΩ TC=150°C IC=-10 A IB=-40 mA IC=-16 A IB=-80 mA IC=-10 A...