MJ4030

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC IB B MJ4030 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -16 http://www.DataSheet4U.net/ UNIT V V V A A W ℃ ℃ -0.5 150 200 -55~200 PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn datasheet pdf - http://www.DataSheet4U.net/ INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ4030 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter Saturation Voltage IC=-5A; IB=-400mA -3 V VBE(on) ICER Base-Emitter On voltage IC=-10A ; VCE=-3V VCB=-60V; RBE= 1KΩ; VCB=-60V; RBE= 1KΩ; TC= 150℃ VCE=-30V; IB=0 -3 -1 -5 -3 V Collector Cutoff ...