PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transis...
PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base
PNP power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary
NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Ratings
IE=0
http://www.DataSheet4U.net/
Value
MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 -60 -80 -60 -80 -5.0 -10 -0.2 150 200 -65 to +200
Unit
V V V A A W °C
IB=0 IC=0
@ TC < 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/
PNP MJ2500 – MJ2501
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
BVCEO
Ratings
Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current
Test Condition(s)
IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.0 V IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE=1.0 kΩ VCB=-60 V RBE=1.0 kΩ TC=150°C VCB=-80 V RBE=1.0 kΩ TC=150°C IC=-5.0 A IB=-20 mA IC=-10 A IB=-50 mA IC=-5.0 A VCE=-3.0V VCE=-3.0 V IC=-5.0 A
http://www.DataSheet4U.net/
Min
-60 -80 -
Typ
-
M...