SEMICONDUCTORS
BUV27 – BUV27A SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are...
SEMICONDUCTORS
BUV27 – BUV27A SILICON POWER
TRANSISTORS
High-speed,
NPN power
transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching
regulators and motor control. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Value Symbol
VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg
Ratings BUV27
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 175 tp = 10ms
www.DataSheet.net/
Unit BUV27A
300 150 7 12 20 4 6 85 V V V A A A A W °C -65 to 175 IE = 0 IB = 0 IC = 0 240 120 7
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
From junction to mounting base
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
13
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BUV27 – BUV27A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value Symbol
ICEX IEBO VCEOsust VEBO
Ratings
Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter Saturation Voltage
Test Condition(s) Min
BUV27 VCE =VCESMax VBE= 1.5V, TJ= 125°C BUV27A BUV27 VEB= 5 V, IC= 0 BUV27A BUV27 IB= 0 , IC= 0.2 A L = 25 mH BUV27A BUV27 IE= 50 mA , IC= 0 BUV27A IC= 4 A, IB= 400 mA BUV27 IC=...