BUV27

SEMICONDUCTORS BUV27 – BUV27A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Value Symbol VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Ratings BUV27 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 175 tp = 10ms www.DataSheet.net/ Unit BUV27A 300 150 7 12 20 4 6 85 V V V A A A A W °C -65 to 175 IE = 0 IB = 0 IC = 0 240 120 7 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings From junction to mounting base Value 1.76 Unit °C/W 29/09/2012 COMSET SEMICONDUCTORS 13 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BUV27 – BUV27A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Value Symbol ICEX IEBO VCEOsust VEBO Ratings Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter Saturation Voltage Test Condition(s) Min BUV27 VCE =VCESMax VBE= 1.5V, TJ= 125°C BUV27A BUV27 VEB= 5 V, IC= 0 BUV27A BUV27 IB= 0 , IC= 0.2 A L = 25 mH BUV27A BUV27 IE= 50 mA , IC= 0 BUV27A IC= 4 A, IB= 400 mA BUV27 IC=...