BUV26F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB B BUV26F/AF VALUE 180 UNIT VCES Collector-Emitter Voltage VBE= 0 V 200 90 V 100 5 14 25 4 6 18 150 -65~150 www.DataSheet.net/ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 7.0 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= 0.2A ;IB= 0; L= 25mH B BUV26F/AF CONDITIONS MIN 90 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF IC= 12A; IB= 1.2A IC= 10A; IB= 1.0A IC= 6A; IB= 0.6A ...