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BU2508AF

Comset Semiconductors

Silicon NPN Power Transistors

NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic pac...


Comset Semiconductors

BU2508AF

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NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM PC TJ Tstg Ratings Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range www.DataSheet.net/ Value 1500 700 7.5 8 15 4 6 45 150 -65~150 Unit V V V A A A A W °C °C THERMAL CHARACTERISTICS Symbol Rth j-c Ratings Thermal Resistance,Junction to Case Value 2.5 Unit °C/W 25/10/2012 08/11/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BU2508AF ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) Ratings Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Test Condition(s) IC= 100mA IB= 0, L= 25mH IE= 1mA IC= 0 IC= 4.5A IB= 1.1A IC= 4.5A IB= 1.7A VCE= 1500V VBE= 0 VCE= 1500V, VBE= 0 TC=125°C VEB= 7.5V IC= 0 www.DataSheet.net/ Min 700 7.5 4 - Typ 13 80 Max 1.0 1.1 1.0 Unit V V V V ICES mA 2.0 1.0 7 mA pF IEBO hFE hFE COB Emitter Cutoff Current DC Current Gain DC Current Gain Output C...




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