BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Si...
BDY55 – BDY56
NPN SILICON
TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
www.DataSheet.net/
Value
BDY55 BDY56 BDY55 BDY56 60 120 100 150 7 15 7 117 200 -65 to +200
Unit
V V V A A W °C
@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDY55 – BDY56
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) ICEO IEBO
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current
Test Condition(s)
IC = 200 mA IB = 0 VCE = 30 V VCE = 60 V VEB = 7 V VCE = 100 V VBE = -1.5 V VCE = 100 V VBE = -1.5 V TCASE = 150°C VCE = 150 V VBE = -1.5 V VCE = 150 V VBE = -1.5 V TCASE = 150°C IC = 4.0 A IB = 0.4 A IC = 10 A IB = 3.3 A IC = 10 A IB = 3.3 A IC = 4.0 A VCE = 4.0 V VCE = 4 V IC = 4 A VCE = 4 V IC =10 A VCE = 4.0 V IC = 1.0 A, f = 10 MHz IC = 5 A IB = 1 A IC = 5 A IB1 = 1 A IB2 = -0.5 A
www.DataSheet.net/
Min
60 120 -
Typ
-
Max
0.7 0.5 5 3 5 30
Unit
V mA mA
BDY55 BDY56 BDY55 BDY56 BDY55 BDY56
BDY55 BDY56 BDY55 BD...