NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package. LF Large Signal Power Ampli...
NPN BDY53 – BDY54 SILICON
TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PTOT Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature TJ
Ratings
BDY53 BDY54 BDY53 BDY54
Value
60 120 100 180 7 12 5
Unit
V V V A A W
www.DataSheet.net/
@ TC = 25°
60
-65 to +200 TS Storage Temperature
°C
08/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) IEBO
Ratings
Collector-Emitter Breakdown Voltage (*) Emitter-Base Cutoff Current Collector-Emitter Cutoff Current
Test Condition(s)
IC=100 mA, IB=0 VEB=7 V VCE=100 V VBE=-1.5 V TCASE=150°C VCE=150 V VBE=-1.5 V TCASE=150°C BDY53 BDY54 BDY53 BDY54 BDY53
Min
60 120 -
Typ
-
Max
3.0
Unit
V mA
ICEX
15 BDY54 20 20 0.3 1.8 1.1
mA
VCE(SAT)
Collector-Emitter saturation IC=4.0 A, IB=0.4 A Voltage (*) IC=7.0 A, IB=1.4 A
www.DataSheet.net/
VBE(SAT)
Base-Emitter Voltage (*) Static Forward Current transfer ratio (*) Transition Frequency Turn-on time Turn-off time
h21E fT t d + tr t s + tf
BDY53 BDY54 BDY53 BDY54 BDY53 IC=4.0 A, IB=0.4 A BDY54 BDY53 IC=7.0 A, IB=1.4 A BDY54 BDY53 VCE=1.5 V, IC=2 A BDY54 VCE=4.0 V, IC=0.5 A BDY53 f=10 MHz BDY54 BDY53 IC=5 A, IB=1 A BDY54 IC...
