BDY53

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ BDY53 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY53 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 2.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A 2.5 V ICEX Collector Cutoff Current VCE= 100V;VBE=-1.5V,TC=150℃ 15 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 3.0 mA hFE DC Current Gain IC= 2A; VCE= 1.5V 20 fT Current Gai...