BDX67C

BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Value 60 80 100 120 80 100 120 140 5.0 Unit VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage www.DataSheet.net/ V VEBO Emitter-Base Voltage V IC(RMS) IC Collector Current ICM 16 A 20 IB Base Current 0.25 A PT TJ TS Power Dissipation Junction Temperature Storage Temperature @ TC = 25° 150 Watts W/°C -55 to +200 °C 05/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX67 – A – B – C THERMAL CHARACTERISTICS Symbol Ratings BDX67 BDX67A BDX67B BDX67C Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX67 Min 60 80 100 120 - Typ - Max - Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V BDX67A www.DataSheet.net/ BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C V ICEO Collector Cutoff ...