BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal ...
BDX67 – A – B – C
NPN SILICON DARLINGTON POWER
TRANSISTOR
The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary
PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
Value
60 80 100 120 80 100 120 140 5.0
Unit
VCEO
Collector-Emitter Voltage
V
VCBO
Collector-Base Voltage
www.DataSheet.net/
V
VEBO
Emitter-Base Voltage
V
IC(RMS) IC Collector Current ICM
16 A 20
IB
Base Current
0.25
A
PT TJ TS
Power Dissipation Junction Temperature Storage Temperature
@ TC = 25°
150
Watts W/°C
-55 to +200
°C
05/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX67 – A – B – C
THERMAL CHARACTERISTICS Symbol Ratings
BDX67 BDX67A BDX67B BDX67C
Value
Unit
RthJ-C
Thermal Resistance, Junction to Case
1.17
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX67
Min
60 80 100 120 -
Typ
-
Max
-
Unit
VCEO(SUS)
Collector-Emitter Breakdown Voltage (*)
IC=0.1 A, L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V
BDX67A
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BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
V
ICEO
Collector Cutoff ...