BDX64B

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX64 -80 VCBO Collector-Base Voltage BDX64A BDX64B -100 -120 BDX64C -140 BDX64 -60 VCEO Collector-Emitter Voltage BDX64A BDX64B -80 -100 BDX64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -16 IB Base Current-Continuous -0.2 PC Collector Power Dissipation @ TC=25℃ 117 TJ Junction Temperature 200 Tstg Storage Temperature Range -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W BDX64/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX64 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX64A BDX64B IC= -50mA ;IB=0 -80 -100 V BDX64C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -3V -2.5 V VECF C-E Diode Forward Volta...