BDX63

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.94 ℃/W BDX63/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A BDX63B IC= 50mA ;IB=0 BDX63C VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) VECF ICEO ICBO IEBO Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I...