BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal...
BDX62 – A – B – C
PNP SILICON DARLINGTON POWER
TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary
NPN are BDX63, BDX63A, BDX63B, BDX63C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C
Value
-60 -80 -100 -120 -60 -80 -100 -120 -5.0 -8 -12 -0.15 90 -55 to +200
Unit
VCEO
Collector-Emitter Voltage
V
www.DataSheet.net/
VCEV VEBO IC IB PT TJ TS
Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature
Storage Temperature
VBE=-1.5 V
V V A A W °C
IC(RMS) ICM @ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX62 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C
www.DataSheet.net/
Min
-60 -80 -100 -120 -
Typ
-
Max
-0.5
Unit
VCEO(SUS)
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62
V
mA
-5.0 -0.2 -2 -0.2 -2
mA
BDX62A BDX62B BDX62C BDX62 BDX62A BDX6...
