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PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Collector-Emitter Voltage
Ratings
www.DataSheet.net/
Value
BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -0.25 70 -65 to +150
Unit
VCEO
IB=0
V
VCBO
Collector-Base Voltage
IE=0 IC(RMS) ICM @ TC = 25°
V
IC IB PT TJ TS
Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
A A W °C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDX34 – BDX34A – BDX34B – BDX34C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C
Min
-45 -60 -80 -100 -45 -60 -80 -100 -45 -60 -80 -100 -
Typ
-
Max
-0.5
Unit
VCEO(SUS)
IC=-100 mA
V
VCER(SUS)
Collector-Emitter Sustaining Voltage (*)
IB=-100 mA RBE=100Ω
V
VCEV(SUS)
Collector-Emitter Sustaining Voltage (*)
IC=1-00 mA VBE=-1.5 V VCB=-22V VCB=-30V VCB=-40V VCB=-50V VCB=-22V, TC=100°C VCB=-30V, TC=100°C VCB=-40V, TC=100°C VCB=-50V, TC=100°C
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V
ICEO
Collector Cutoff Current
mA -10
IEBO
Emitter Cutoff Current
VBE=-5 V
-
-
-5.0
mA
ICBO
Collector-Base Cutoff Current
VCBO=-45 V VCBO=-60 V VCBO=-80 V VCBO=-100 V
-
-
-0.2
mA
23/10/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDX34 – BDX34A – BDX34B – BDX34C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCBO=-45 V TC=100°C VCBO=-60 V TC=100°C VCBO=-80 V TC=100°C VCBO=-100 V TC=100°C IC=-4.0 A, IB=-8.0 mA BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C
Min
-
Typ
-
Max
Unit
ICBO
Collector-Base Cutoff Current
-5 -
mA
-
-
-2.5 V
VCE(SAT)
Collector-Emitter saturation Voltage (*)
www.DataSheet.net/
IC=-3.0 A, IB=-6.0 mA
-
-
-2.5
VF
Forward Voltage (pulse method)
IF=-8 A
-
-
4.0
V
VBE
Base-Emitter Voltage (*)
IC=-4.0 A, VCE=-3.0V IC=-3.0 A, VCE=-3.0V VCE=-3.0 V, IC=-4.0 A
750 750
-
-2.5 V -2.5 -
hFE
DC Current Gain (*) VCE=-3.0 V, IC=-3.0 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
3/4
Datas.