DatasheetsPDF.com

BDX34C Dataheets PDF



Part Number BDX34C
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet BDX34C DatasheetBDX34C Datasheet (PDF)

PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataS.

  BDX34C   BDX34C



Document
PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -0.25 70 -65 to +150 Unit VCEO IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = 25° V IC IB PT TJ TS Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.78 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDX34 – BDX34A – BDX34B – BDX34C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C Min -45 -60 -80 -100 -45 -60 -80 -100 -45 -60 -80 -100 - Typ - Max -0.5 Unit VCEO(SUS) IC=-100 mA V VCER(SUS) Collector-Emitter Sustaining Voltage (*) IB=-100 mA RBE=100Ω V VCEV(SUS) Collector-Emitter Sustaining Voltage (*) IC=1-00 mA VBE=-1.5 V VCB=-22V VCB=-30V VCB=-40V VCB=-50V VCB=-22V, TC=100°C VCB=-30V, TC=100°C VCB=-40V, TC=100°C VCB=-50V, TC=100°C www.DataSheet.net/ V ICEO Collector Cutoff Current mA -10 IEBO Emitter Cutoff Current VBE=-5 V - - -5.0 mA ICBO Collector-Base Cutoff Current VCBO=-45 V VCBO=-60 V VCBO=-80 V VCBO=-100 V - - -0.2 mA 23/10/2012 COMSET SEMICONDUCTORS 2/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDX34 – BDX34A – BDX34B – BDX34C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCBO=-45 V TC=100°C VCBO=-60 V TC=100°C VCBO=-80 V TC=100°C VCBO=-100 V TC=100°C IC=-4.0 A, IB=-8.0 mA BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C Min - Typ - Max Unit ICBO Collector-Base Cutoff Current -5 - mA - - -2.5 V VCE(SAT) Collector-Emitter saturation Voltage (*) www.DataSheet.net/ IC=-3.0 A, IB=-6.0 mA - - -2.5 VF Forward Voltage (pulse method) IF=-8 A - - 4.0 V VBE Base-Emitter Voltage (*) IC=-4.0 A, VCE=-3.0V IC=-3.0 A, VCE=-3.0V VCE=-3.0 V, IC=-4.0 A 750 750 - -2.5 V -2.5 - hFE DC Current Gain (*) VCE=-3.0 V, IC=-3.0 A (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 23/10/2012 COMSET SEMICONDUCTORS 3/4 Datas.


BDX34B BDX34C BDX35


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)