BDX34A

PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -0.25 70 -65 to +150 Unit VCEO IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = 25° V IC IB PT TJ TS Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.78 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDX34 – BDX34A – BDX34B – BDX34C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C Min -45 -60 -80 -100 -45 -60 -80 -100 -45 -60 -80 -100 - Typ - Max -0.5 Unit VC...