isc Silicon PNP Darlington Power Transistor
BDV66/A/B/C
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Sa...
isc Silicon
PNP Darlington Power
Transistor
BDV66/A/B/C
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDV66
-80
VCBO
Collector-Base Voltage
BDV66A
-100
V
BDV66B
-120
BDV66C
-140
BDV66
-60
VCEO
Collector-Emitter Voltage
BDV66A
-80
V
BDV66B
-100
BDV66C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.5
A
175
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.625 ℃/W
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isc Silicon
PNP Darlington Power
Transistor
BDV66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV66
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDV66A BDV66B
IC= -50mA ;IB=0
BDV66C
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VBE(on) ICEO
Base-Emitter On Voltage Collector Cutoff Current
IC= -10A ; VCE= -3V VCE= 1/2VCEOma...