BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Ratings
Collector-Emitter Voltage BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
-60 -80 -100 -120 -60 -80 -100 -120 -5.0
Unit
V
VCBO
Collector-Base Voltage
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V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
-12 A -15
ICM
Collector Peak Current
IB
Base Current
-0.5
A
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BDV64-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Tmb = 25° C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
125
Unit
PT
Power Dissipation Tmb = 25° C
W 3.5
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
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THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
1
Unit
°C / W 35.7
Rthj-a
Thermal Resistance, Junction to Ambient
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BDV64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector Cutoff Current
Test Condition(s)
VCE= -30 V, IB= 0 VCE= -40 V, IB= 0 VCE= -50 V, IB= 0 VCE= -60 V, IB= 0 VBE= -5 V, IC= 0 VCB= -60 V VCB= -80 V VCB= -100 V VCB= -120 V VCB= -30 V VCB= -40 V VCB= -50 V VCB= -60 V
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Min
Typ
Max
Unit
ICEO
IEBO
Emitter Cutoff Current
IE= 0 Tj=25°C ICBO Collector Cutoff Current IE= 0 Tj=150°C
VCEO
Collector-Emitter I = -30 mA, IB = 0 Breakdown Voltage (*) C
hFE
DC Current Gain (*)
VCE= -4 V, IC= -5 A
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC= -5 A, IB= -20 mA
VBE
Base-Emitter Voltage(*)
VCE= -4 V, IC= -5 A
BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
-
-
-2
mA
-
-
-5
mA
-
-
-0.4 mA
-60 -80 -100 -120 1000
-
-2 V
-
-
-
-2
V
-
-
-2,5
V
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
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BDV64-A-B-C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Collector
0.35 5.35 20.00 19.60 0.95
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4.80
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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