BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. The...
BDV64-A-B-C
PNP SILICON DARLINGTONS POWER
TRANSISTORS
They are silicon epitaxial base
transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Ratings
Collector-Emitter Voltage BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
-60 -80 -100 -120 -60 -80 -100 -120 -5.0
Unit
V
VCBO
Collector-Base Voltage
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V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
-12 A -15
ICM
Collector Peak Current
IB
Base Current
-0.5
A
26/09/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV64-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Tmb = 25° C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
125
Unit
PT
Power Dissipation Tmb = 25° C
W 3.5
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
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THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C
Value
1
Unit
°C / W 35.7
Rthj-a
Thermal Resistance, Junction to Ambient
26/09/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise n...
