PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS
The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base ...
PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER
TRANSISTORS
The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base
transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.
NPN complements are BDT81 – BDT83 – BDT85 – BDT87. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
www.DataSheet.net/
Value
BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 -60 -80 -100 -120 -60 -80 -100 -120 -7 -15 -20 -4 125 150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
-IB = 0
V
VCBO VEBO IC ICM IB Pt TJ TStg
Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature
-IE = 0 -IC = 0
V V A A A W °C °C
@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJa RthJmb
Ratings
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base COMSET SEMICONDUCTORS
Value
70 1
Unit
K/W K/W
1|4
09/11/2012
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDT82 – BDT84 – BDT86 – BDT88
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = -100 V IE=0A, VCB = -120 V VBE=0, VCE = -60V VBE=0, VCE = -80V VBE=0, VCE = -100V VBE=0, VCE = -120V VEB= -7 V IC=0
www.DataSheet.net/
Min
Typ
Max
Unit
ICB0
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current...