2N6255

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.0 1 Unit Vdc Vdc Vdc A Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 5.0 28.5 Watts mW/ ºC MSC1306.PDF 10-25-99 2N6255 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) 36 18 4.0 Value Typ. 5.0 .25 Max. Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) 5.0 - DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 12.5Vdc, f = 1.0 MHz Value 15 20 pF FUNCTIONAL Symbol GPE ηC Power Gain Test Conditio...