MT29F128G08CEAAA

Micron Confidential and Proprietary Advance‡ 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAAA, MT29F128G08C[E/F]AAA, MT29F256G08C[J/K/M]AAA, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB, MT29F512G08CUCAB Features Open NAND Flash Interface (ONFI) 2.2-compliant1 Multiple-level cell (MLC) technology Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) Array performance – Read page: 50µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP) Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V Command set: ONFI NAND Flash Protocol Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109). RESET (FFh) required as first command after poweron Operation status byte provides software method for detecting –...