Document
SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C
Value
-60 -80 -100 -120 -60 -80 -100 -120
Unit
VCBO
Collector-Base Voltage
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V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-12
A
ICM
Collector Peak Current
-20
A
26/09/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C
Value
Unit
IB
Base Current
-500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
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Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
IE= 0,VCB = -VCBOmax ICBO Collector Cutoff Current
IE= 0,VCB= -1/2 VCBOmax TJ= 150 °C IE= 0, VCE= -1/2 VCEOmax
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
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VCEO
Collector-Emitter I = -30 mA, IB= 0 Breakdown Voltage C
IC= -5 A, IB= -20 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -100 mA
BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C
-
-
-0.4
mA
-
-
-2
mA
-
-
0.2
mA
-60 -80 -100 -120 -
-
-5 -2
mA
V
V -3
26/09/2012
COMSET SEMICONDUCTORS
3|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Base-Emitter Voltage IC= -5 A, VCE= -4 V (*) BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C
Min
Typ
Max
Unit
VBE(on)
-
-
-2.5
V
IF= -5 A VECF C-E Diode Forward Voltage IF= -12 A
-
-2 V
-
-2
-
VCE= -4 V, IC= -1 A
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-
1500
-
hFE
DC Current Gain (*)
VCE= -4 V, IC= -5 A
1000
-
-
-
VCE= -4 V, IC= -12 A
-
750
-
COB
Output Capacitance
IE= 0, VCB = -10 V ftest= 1MHz.