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BDT64C Dataheets PDF



Part Number BDT64C
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Silicon Darlington Power Transistor
Datasheet BDT64C DatasheetBDT64C Datasheet (PDF)

SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B .

  BDT64C   BDT64C



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SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C Value -60 -80 -100 -120 -60 -80 -100 -120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage -5 V IC Collector Current -12 A ICM Collector Peak Current -20 A 26/09/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit IE= 0,VCB = -VCBOmax ICBO Collector Cutoff Current IE= 0,VCB= -1/2 VCBOmax TJ= 150 °C IE= 0, VCE= -1/2 VCEOmax ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VEB= -5 V, IC= 0 www.DataSheet.net/ VCEO Collector-Emitter I = -30 mA, IB= 0 Breakdown Voltage C IC= -5 A, IB= -20 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -100 mA BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C - - -0.4 mA - - -2 mA - - 0.2 mA -60 -80 -100 -120 - - -5 -2 mA V V -3 26/09/2012 COMSET SEMICONDUCTORS 3|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Base-Emitter Voltage IC= -5 A, VCE= -4 V (*) BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C Min Typ Max Unit VBE(on) - - -2.5 V IF= -5 A VECF C-E Diode Forward Voltage IF= -12 A - -2 V - -2 - VCE= -4 V, IC= -1 A www.DataSheet.net/ - 1500 - hFE DC Current Gain (*) VCE= -4 V, IC= -5 A 1000 - - - VCE= -4 V, IC= -12 A - 750 - COB Output Capacitance IE= 0, VCB = -10 V ftest= 1MHz.


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