BDT64C

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W BDT64/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64A BDT64B IC= -30mA ;IB=0 -80 -100 V BDT64C -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on) Base-Emitt...