SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a m...
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER
TRANSISTORS
PNP epitaxial-base
transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 Tc = 25° Ta = 25°
Value
-45 -60 -80 -100 -45 -60 -80 -100 -5
Unit
VCBO
Collector-Base Voltage
V
www.DataSheet.net/
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
-8
A
IB
Base Current
-300
mA
PT TJ Ts
Power Dissipation Junction Temperature Storage Temperature range
70 2 150 -65 to +150
Watts °C
25/09/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V IE= 0, VCE = - 30 V IE= 0, VCE = - 40 V IE= 0, VCE = - 50 V
www.DataSheet.net/
Min
Typ
Max
Unit
BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD...