BD684A

PNP BD684 – BD684A SILICON DARLINGTON POWER TRANSISTORS The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 and BD683A. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IBM PT TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ratings Value -120 -120 -5 -4 -6 -0.1 40 150 -65 to +150 Unit V V V A A W °C °C www.DataSheet.net/ Collector Current Base current peak value Total power Dissipation Junction Temperature Storage Temperature @ Tmb = 25°C IC ICM THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD684 – BD684A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 -0,8 - Typ 60 -1,5 0,8 4,5 Max -0,2 -2 -0,5 -5 -2,5 Unit mA mA mA V IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Collector cut-off current IB=0,VCE= -1/2VCEOMAX Emitter cut-offcurrent IC=0, VEB=-5 V IC=-1.5 A BD683 Collector-Emitter saturation IB=-30 mA Voltage (*) IC=-2 A, IB=-40 mA BD683A VCE=-3 V, IC=-1.5 A BD683 VCE=-3 V, IC=-2 A BD683A VCE=-3 V, IC=-1.5 A BD683...