PNP BD684 – BD684A
SILICON DARLINGTON POWER TRANSISTORS
The BD684 and BD684A are PNP eptaxial-base transistors in monol...
PNP BD684 – BD684A
SILICON DARLINGTON POWER
TRANSISTORS
The BD684 and BD684A are
PNP eptaxial-base
transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.
NPN complements are BD683 and BD683A. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IBM PT TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Ratings
Value
-120 -120 -5 -4 -6 -0.1 40 150 -65 to +150
Unit
V V V A A W °C °C
www.DataSheet.net/
Collector Current Base current peak value Total power Dissipation Junction Temperature Storage Temperature @ Tmb = 25°C
IC ICM
THERMAL CHARACTERISTICS Symbol
RthJ-mb RthJ-a
Ratings
Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air
Value
3.12 100
Unit
K/W K/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BD684 – BD684A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB)
Ratings
Collector cut-off current
Test Condition(s)
Min
750 10 -0,8 -
Typ
60 -1,5 0,8 4,5
Max
-0,2 -2 -0,5 -5 -2,5
Unit
mA mA mA V
IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Collector cut-off current IB=0,VCE= -1/2VCEOMAX Emitter cut-offcurrent IC=0, VEB=-5 V IC=-1.5 A BD683 Collector-Emitter saturation IB=-30 mA Voltage (*) IC=-2 A, IB=-40 mA BD683A VCE=-3 V, IC=-1.5 A BD683 VCE=-3 V, IC=-2 A BD683A VCE=-3 V, IC=-1.5 A BD683...