SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
60 80 100 120 140 45 60 80 100 120
Unit
VCBO
Collector-Base Voltage
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V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current
12
A
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COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
Unit
IB
Base Current
300
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
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Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-MB RthJ-A
Ratings
From junction to mounting base From junction to ambient in free air
Value
2 62.5
Unit
K/W K/W
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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Min
Typ
Max
Unit
IE=0,VCB =VCEOMax ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMax TJ=150°C
-
-
0.2
mA
-
-
2
mA
ICEO
Collector Cutoff Current
IE=0, VCE =1/2 VCEOMax
-
-
0.5
mA
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IEBO
Emitter Cutoff Current
VEB=5 V, IC=0
-
-
5.0
mA
VCEO
Collector-Emitter Breakdown Voltage
IC=30 mA, IB= 0
IC=4 A, IB=16 mA IC=3 A, IB=12 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5 A, IB=50 mA
45 60 80 100 120 -
-
2 2
V
V 2.5
VBE(SAT)
Base-Emitter Saturation Voltage (*)
IC=12 A, IB=50 mA
-
-
3
V
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Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC=4 A, VCE=3 V
Min
-
Typ
-
Max
2.5 2.5
Unit
VBE
hFE
hfe
BD643 BD645 Base-Emitter Voltage (*) BD647 IC=3 A, VCE=3 V BD649 BD651 BD643 BD645 VCE=3.0 V, IC=0.5 A BD647 BD649 BD651 VCE=3.0 V, IC=4 A BD643 BD645 DC Current Gain (*) BD647 VCE=3.0 V, IC=3 A BD649 BD651 BD643 BD645 VCE=3.0 V, IC=8 A BD647 BD649 BD651 VCE=3.0 V, IC=4 A BD643 f=1MHz BD645 Small Signal Current Gain BD647 VCE=3.0 V, IC=3 A f=1MHz BD649 BD651
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V
-
1900
-
750 750
-
-
-
1800
-
10 10 10 10 10
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
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SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90
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Pin 1 : Pin 2 : Pin 3 : Case :
Base Collector Emitter Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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17/10/2012 COMSET SEMICONDUCTORS
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