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BD643 Dataheets PDF



Part Number BD643
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description SILICON DARLINGTON POWER TRANSISTORS
Datasheet BD643 DatasheetBD643 Datasheet (PDF)

SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 B.

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SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 60 80 100 120 140 45 60 80 100 120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Peak Current 12 A 17/10/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 62.5 Unit K/W K/W 17/10/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Min Typ Max Unit IE=0,VCB =VCEOMax ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMax TJ=150°C - - 0.2 mA - - 2 mA ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMax - - 0.5 mA www.DataSheet.net/ IEBO Emitter Cutoff Current VEB=5 V, IC=0 - - 5.0 mA VCEO Collector-Emitter Breakdown Voltage IC=30 mA, IB= 0 IC=4 A, IB=16 mA IC=3 A, IB=12 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5 A, IB=50 mA 45 60 80 100 120 - - 2 2 V V 2.5 VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA - - 3 V 17/10/2012 COMSET SEMICONDUCTORS 3|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IC=4 A, VCE=3 V Min - Typ - Max 2.5 2.5 Unit VBE hFE hfe BD643 BD645 Base-Emitter Voltage (*) BD647 IC=3 A, VCE=3 V BD649 BD651 BD643 BD645 VCE=3.0 V, IC=0.5 A BD647 BD649 BD651 VCE=3.0 V, IC=4 A BD643 BD645 DC Current Gain (*) BD647 VCE=3.0 V, IC=3 A BD649 BD651 BD643 BD645 VCE=3.0 V, IC=8 A BD647 BD649 BD651 VCE=3.0 V, IC=4 A BD643 f=1MHz BD645 Small Signal Current Gain BD647 VCE=3.0 V, IC=3 A f=1MHz BD649 BD651 www.DataSheet.net/ V - 1900 - 750 750 - - - 1800 - 10 10 10 10 10 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 17/10/2012 COMSET SEMICONDUCTORS 4|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 www.DataSheet.net/ Pin 1 : Pin 2 : Pin 3 : Case : Base Collector Emitter Collector Revised September 2012           Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.   www.comsetsemi.com 17/10/2012 COMSET SEMICONDUCTORS [email protected] 5|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ .


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