BD245C

BD245 – A – B – C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C IC ICM Tmb = 25° C Value 45 60 80 100 55 70 90 115 5.0 10 15 3 80 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage (IC = -30mA) www.DataSheet.net/ V VCER VEBO IC IB PT TJ TS Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value 1.56 42 Unit °C / W °C / W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ BD245 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) = 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C Min Typ Max Unit ICES Collector- Emitter Cut-off Current - - 0.4 mA ICEO IEBO VCEO Collector Cut-off Current VCE = 30 V , IB = 0 VCE = 60 V , IB = 0 45 60 80 100 40 20 4 20 3 - 0.7 1 1 4 1.6 3 - mA mA V Emitter Cut-off Current VE B = 5 V , IC = 0 Collector- Emitter I = 30 mA, IB =...