Document
PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD239, A, B, C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C
Value
-45 -60 -80 -100 -55 -70 -90 -115 -45 -60 80 -100 -5.0 -3 -7 0.5 30 30 150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
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V
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
V
VCBO VEBO IC IB PT TJ TS
Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ Tamb = 25° C @ Tcase = 25° C IC ICM
V V A A W W °C
THERMAL CHARACTERISTICS Symbol
RthJ-amb RthJ-case
Ratings
Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case
Value
70 4.17
Unit
°C/W °C/W
22/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BD240 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V
Min
-45 -60 -80 -100 40
Typ
-
Max
Unit
ICEO
IEBO
ICES
VCEO(sus)
hFE
VCE(SAT)
VBE(on)
hfe
fT
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012
BD240 BD240A Collector Cutoff Current BD240B BD240C BD240 BD240A Emitter Cutoff Current VBE=-5 V BD240B BD240C BD240 VCE=-45 V VCE=-60 V BD240A Collector Cutoff Current (VBE = 0) VCE=-80 V BD240B VCE=-100 V BD240C BD240 Collector-Emitter BD240A Sustaining Voltage IC =-30mA BD240B (IB = 0) (*) BD240C BD240 BD240A VCE=-4 V IC=-0.2 A BD240B BD240C DC Current Gain (*) BD240 BD240A VCE=-4 V IC=-1 A BD240B BD240C BD240 Collector-Emitter IC=-1 A BD240A saturation Voltage (*) IB=-200 mA BD240B BD240C BD240 BD240A VCE=-4 V Base-Emitter Voltage (*) IC=-1 A BD240B BD240C BD240 VCE=10 V BD240A IC=0.2 A BD240B f = 1KHz BD240C Small Signal Current Gain BD240 VCE=-10 V BD240A IC=-0.2 A BD240B f = 1MHz BD240C Transistor frequency VCE=-10 V, IC=-0.2 A, f = 1MHz
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-0.3
mA
-1.0
mA
-0.2
mA
V
-
-
15
-
-
-
-
0.6
V
-
-
1.3
V
20
-
-
3 3
-
-
MHz
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BD240 – A – B – C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90
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Pin 1 : Pin 2 : Pin 3 : Case :
Base Collector Emitter Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which.