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BD240B Dataheets PDF



Part Number BD240B
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Medium Power Linear/Switching
Datasheet BD240B DatasheetBD240B Datasheet (PDF)

PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD239, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C Value -45 -60 -80 -100 -55 -70 -90 -115 -45 -60 80 -100 -5.0 -3 -7 0.5.

  BD240B   BD240B



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PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD239, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C Value -45 -60 -80 -100 -55 -70 -90 -115 -45 -60 80 -100 -5.0 -3 -7 0.5 30 30 150 -65 to +150 Unit VCEO Collector-Emitter Voltage www.DataSheet.net/ V VCER Collector-Emitter Voltage (RBE = 100 Ω) V VCBO VEBO IC IB PT TJ TS Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ Tamb = 25° C @ Tcase = 25° C IC ICM V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 70 4.17 Unit °C/W °C/W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD240 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V Min -45 -60 -80 -100 40 Typ - Max Unit ICEO IEBO ICES VCEO(sus) hFE VCE(SAT) VBE(on) hfe fT (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012 BD240 BD240A Collector Cutoff Current BD240B BD240C BD240 BD240A Emitter Cutoff Current VBE=-5 V BD240B BD240C BD240 VCE=-45 V VCE=-60 V BD240A Collector Cutoff Current (VBE = 0) VCE=-80 V BD240B VCE=-100 V BD240C BD240 Collector-Emitter BD240A Sustaining Voltage IC =-30mA BD240B (IB = 0) (*) BD240C BD240 BD240A VCE=-4 V IC=-0.2 A BD240B BD240C DC Current Gain (*) BD240 BD240A VCE=-4 V IC=-1 A BD240B BD240C BD240 Collector-Emitter IC=-1 A BD240A saturation Voltage (*) IB=-200 mA BD240B BD240C BD240 BD240A VCE=-4 V Base-Emitter Voltage (*) IC=-1 A BD240B BD240C BD240 VCE=10 V BD240A IC=0.2 A BD240B f = 1KHz BD240C Small Signal Current Gain BD240 VCE=-10 V BD240A IC=-0.2 A BD240B f = 1MHz BD240C Transistor frequency VCE=-10 V, IC=-0.2 A, f = 1MHz www.DataSheet.net/ -0.3 mA -1.0 mA -0.2 mA V - - 15 - - - - 0.6 V - - 1.3 V 20 - - 3 3 - - MHz COMSET SEMICONDUCTORS 2/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD240 – A – B – C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 www.DataSheet.net/ Pin 1 : Pin 2 : Pin 3 : Case : Base Collector Emitter Collector Revised September 2012           Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which.


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