isc Silicon NPN Power Transistor
BD201/203
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203
·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
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