PNP BCY78 – BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal pa...
PNP BCY78 – BCY79 SILICON PLANAR EPITAXIAL
TRANSISTORS
The BCY78 and BCY79 are
PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCES VEBO IC IB PD PD TJ TStg
Ratings
Collector-Emitter Voltage (IB =0) Collector-Emitter Voltage (VBE =0) Emitter-Base Voltage (IC =0)
www.DataSheet.net/
Value
BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 -45 -32 -45 -32 -5 -5 -200 -20 390 1 200 -65 to +150
Unit
V V V mA mA mW W °C °C
Collector Current Base Current Total Power Dissipation Total Power Dissipation @ Tamb = 25° @ Tcase= 45°
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air
Value
450 150
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICES
Ratings
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage
Test Condition(s)
VCB =-35 V, VBE =0V VCB =-25 V, VB =0V VCB =-35 V VBE =0V,Tj =150°C VCB =-25 V VBE =0V,Tj =150°C VBE =-4.0 V, IC =0 IC =-2 mA, IB =0 BCY79 BCY78 BCY79
Min
-
Typ
-
Max
-20
Un...