NPN 2N6253 – 2N6254 – 2N6371 HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon transistors a...
NPN 2N6253 – 2N6254 – 2N6371 HIGH POWER SILICON
NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon
transistors are mounted in TO-3 metal package. Tey are intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO(SUS) Collector-Emitter Voltage
Ratings
2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371
Value
Unit
www.DataSheet.net/
VCBO
Collector-Base Voltage (*) Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage VBE=-1.5V Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature < 25°C > 25°C
VCER(SUS)
VCEV(SUS)
VEBO IC IB PTOT TJ TS
2N6253 2N6254 2N6371
45 V 80 40 55 V 100 50 55 85 V 45 55 90 V 50 5 7 V 5 15 A 7 A 115 Watts 150 117 Derate Linearly to 200°C -65 to +200 °C
09/11/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N6253 – 2N6254 – 2N6371
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case 2N6253 2N6254 2N6371
Value
1.5 1.17 1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC=3 A, IB=0.3 A IC=15 A, IB=5 A IC=5 A, IB=0.5 A IC=15 A, IB=3 A IC=8 A, IB=...