2N4398

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ¡¤ With TO-3 package ¡¤ Complement to type 2N5301/5302/5303 ¡¤ Low collector saturation voltage ¡¤ Excellent safe operating area APPLICATIONS ¡¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=¡æ ) SYMBOL PARAMETER 2N4398 VCBO Collector-base voltage 2N4399 2N5745 2N4398 VCEO Collector-emitter voltage 2N4399 2N5745 VEBO IC IB PD Tj Tstg Emitter-base voltage 2N4398/4399 Collector current 2N5745 Base current Total power dissipation Junction temperature Storage temperature TC=25¡æ -20 -7.5 200 200 -65~200 ¡æ ¡æ A W Open collector Open base www.DataSheet.net/ CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -30 UNIT Open emitter V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ¡æ /W Datasheet pdf - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 IC=-10A; IB=-1A 2N5745 2N4398/4399 IC=-15A ;IB=-1.5A 2N5745 2N4398/4399 2N5745 IC=-20A ;IB=-2A IC=-0.2A ;IB=0 ...