NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3866 are NPN transistors mounted in TO-39 metal package with the c...
NPN 2N3866 SILICON PLANAR EPITAXIAL
TRANSISTORS
The 2N3866 are
NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCES VEBO IC PD TJ TStg
Ratings
Collector-Emitter Voltage Collector-Emitter Voltage (VBE = 0) Emitter-Base Voltage Collector Current Total Power Dissipation @ Tcase= 25° Junction Temperature
www.DataSheet.net/
Value
30 55 3.5 0.5 5 200 -65 to +200
Unit
V V V A Watts °C °C
Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-c
Ratings
Thermal Resistance, Junction-case
Value
35
Unit
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO VCEO (*) VCES VEBO hFE (*) VCE(SAT) (*)
Ratings
Collector Cutoff Current Collector Emitter Sustaining Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage
Test Condition(s)
Min
30 55 3.5 10 5 -
Typ
-
Max
20 200 1
Unit
µA V V V V
VCE=28 V, IB=0 IC=5 mA, IB=0 IC=100 µA, VBE=0 IE=100 µA, IC=0 IC=50 mA, VCE=5 V IC=360 mA, VCE=5 V IC=100 mA IB=20 mA
COMSET SEMICONDUCTORS
1/2
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3866
Symbol
fT CCBO PO (**) η (**)
Ratings
Transition Frequency Collector-Base Capacitance Output Power Collector Efficiency
Test Condition(s)
Min
500 1 45
Typ
-
Max
3 -
Unit
MHz pF pF ps
IC=50 mA, VCE=...
