2N3789

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3789 2N3791 2N3790 2N3792 2N3789 2N3791 2N3790 2N3792 Value -80 Unit V -100 -60 V -80 -7 -10 -4 150 -65 to +200 V A A W °C VCEO VEBO IC IB PD TJ TS Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current IB = 0 IC = 0 www.DataSheet.net/ Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case (Max) Value 1.17 Unit °C/W 05/11/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N3789 VCE=-80 V, VEB=1.5 V 2N3791 2N3790 VCE=-100 V, VEB=1.5 V 2N3792 VCE=-60 V, VEB=1.5 V 2N3789 TC = 150°C 2N3791 VCE=-80 V, VEB=1.5 V 2N3790 TC = 150°C 2N3792 2N3713 2N3714 VBE=-7 V, IC=0 2N3715 2N3716...