INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N3583
DESCRIPTION ·Contunuous Col...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2N3583
DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching
regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature
VALUE 250 175 6 1.0 5.0 1.0 35 200 -65~200
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UNIT V V V A A A W ℃ ℃
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W
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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2N3583
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
175
V
VCE(sat) VBE(on) ICEO ICEX
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.125A
B
5.0
V
Base-Emitter On Voltage
IC= 1A ; VCE= 10V
1.4
V
Collector Cutoff Current
VCE= 150V; IB= 0 VCE= 225V; VBE(off)=...