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2N3447

Comset Semiconductor

TRANSISTORS

NPN 2N3442 – 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors in Jedec TO-39 metal case. They are design...


Comset Semiconductor

2N3447

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Description
NPN 2N3442 – 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors in Jedec TO-39 metal case. They are designed for applictions in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCB VEB Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous IC Collector Current Peak Continuous IB Base Current Peak Total Device Dissipation Junction Temperature Storage Temperature @ TC = 25° Derate above 25° www.DataSheet.net/ Ratings 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 Value 120 140 140 160 7 5 10 10 15 (**) 3 7 8 100 117 0.57 0.67 -65 to +200 Unit V V V A A W W/°C °C °C PD TJ TS (**) This data guaranteed in addition to JEDEC registered data. THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3442 – 2N4347 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO Ratings Collector-Emitter Sustaining Voltage (*) Collector-Emitter Current Test Condition(s) IC=200 mA, IB=0 2N4347 2N3442 2N4347 2N3442 Min 120 140 - Typ - Max 200 200 2.0 10 Unit V mA ICEX Collector Cutoff Current IEBO Emitter Cutoff C...




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