2N3442

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max)@ IC = 10A APPLICATIONS ·Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.49 ℃/W 2N3442 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V ICEO Collector Cutoff Current VCE= 140V; IB= 0 IEBO Emitter Cutoff Current VEB= 7.0V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 4V hFE-2 DC Current Gain IC= 10A; VCE= 4V 2N3442 MIN MAX UNIT 140 V 5.0 V 5.7 V ...