NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors moun...
NPN 2N3439 – 2N3440 HIGH VOLTAGE
TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial
transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series
regulators. Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS Value 2N3439
www.DataSheet.net/
Symbol
VCEO VCBO VEBO IC IB PD TJ TStg
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation IB = 0 IE = 0 IC = 0
2N3440
250 300 7 1 500 1 10 200 -65 to +200
Unit
V V V A mA W °C
350 450
Tamb = 25° Tcase = 25°
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case
Value
175 35
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3439 – 2N3440
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICBO ICEO ICEX IEBO VCEO hFE VCE(SAT) VBE(SAT) fT Cob
Ratings
Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Transition frequency Output Capacitance
Test Condition(s)
VCB = 360 V, IE = 0 VCB = 250 V, IE...
