DatasheetsPDF.com

2N3108

Comset Semiconductor

NPN transistor

NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES C The 2N3108 and 2N3110 are NPN transistors mounted in TO-3...


Comset Semiconductor

2N3108

File Download Download 2N3108 Datasheet


Description
NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES C The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value 2N3108 60 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter IB =0 Voltage Collector-Base Voltage IE =0 Emitter-Base Voltage IC =0 Collector Current T = 25° Total Power Dissipation amb Tcase = 25° Junction Temperature Storage Temperature range 2N3110 40 80 5 1 0.8 5 -65 to +150 -65 to +150 Unit V V V A W °C 100 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 219 35 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3108 – 2N3110 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICES IEBO VCBO VCEO VEBO VCE(SAT) VBE(SAT) hFE Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) VCB = 60 V, IE = 0 Tamb = 150°C VCE = 60 V, VBE = 0 VBE = 5.0 V, IC = 0 IC = 100 µA, IE = 0 IC = 30 mA, IB = 0 IE = 100 µA, IC = 0 IC = 150 mA, IB = 15 mA IC = 1 A, IB = 100 mA IC = 150 mA, IB = 15 mA IC = 1 A, IB = 100 m...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)