2N3055

2N3055 NPN SILICON DARLINGTONS The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCER Ratings Collector to Base Voltage #Collector-Emitter Voltage Collector-Emitter Voltage www.DataSheet.net/ Value 100 60 70 7 100 7 15 7 Unit V V V V V V A A W W/°C °C °C VEBO VCB VEB IC IB PD TJ TS Emitter-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Base Current – Continuous Total Device Dissipation Junction Temperature Storage Temperature @ TC = 25° Derate above 25° 115 0.657 200 -65 to +200 THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.52 Unit °C/W 31/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) BVCER ICEO ICEX IEBO hFE VCE(SAT) VBE hfe fα e VCER(SUS) Is/b Ratings Test Condition(s) Min 60 70 20 15 10 60 1.95 Typ 1.8 - Max 0.7 5.0 5.0 70 1.1 120 - Unit V V MA mA mA Collector-Emitter Sustaining Voltage IC=200 mA, IB=0 (*) Collector-Emitter Breakdown IC=200 mA, RBE=100Ω Voltage (*) Collector-Emitter Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Small Signal Current Gain Small Signal Current Gain Cutoff Frequenc...