2N3020

NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range www.DataSheet.net/ Ratings 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value 80 140 7 1 0.8 Unit V V V A Watts @ Tamb = 25° @ Tcase= 25° 5 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N3019 2N3020 2N3019 2N3020 Value 35 219 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Test Condition(s) VCB =950 V, IE =0 VCB =90 V, IE =0, Tj =150°C Min Typ Mx Unit 80 140 7 50 30 90 40 100 40 50 30 15 40 100 80 80 30 10 10 10 100 120 300 120 100 0.2 0.5 1.1 400 200 4 12 60 400 MHz dB pF pF ps V nA µA nA V V V Emitter Cutoff Current VEB =5 V, IC =0 Collector Emitter Breakdown IC =10 mA, IB =0 Volta...