2N2894

NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCES VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage(VBE = 0) Emitter-Base Voltage (IC = 0) Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° www.DataSheet.net/ Value -12 -12 -12 -4 -200 0.36 1.2 1 -65 to +200 -65 to +200 Unit V V V V mA Watts °C °C @ Tcase<100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 486 146 Unit °C/ W °C/ W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICES VCEO (*) VCES VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-10 µA, IE =0 IE =-100 µA, IC =0 Min -12 -12 -12 -4 Typ - Mx -10 -80 - Unit µA nA V V V V COMSET SEMICONDUCTORS 1/2 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N2894 Symbol hFE (*) Ratings DC Current Gain Test Condition(s) IC =-10 mA, V...