NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VCER VEBO IC PD TJ TStg
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current
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Value
65 120 80 7 1 1 5 -65 to 200
Unit
V V V V A W °C
Total Power Dissipation Junction Temperature Storage Temperature range
Tamb= 25°C Tcase= 25°C
THERMAL CHARACTERISTICS Symbol
RthJ-c Rthj-a
Ratings
Thermal Resistance, Junction-case thermal resistance from junction to ambient in free air
Value
35 175
Unit
°C/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N2102
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO IEBO VCBO VCEO
Ratings
Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*)
Test Condition(s)
VCB= 60 V IE= 0 VEB= 5 V, IC= 0 IC= 100 µA, IE= 0 IC= 30 mA, IB= 0 IC= 10 µA, VCE= 10 V IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V IC= 1 A, VCE= 10 V IC= 150 mA, IB= 15 mA IC= 150 mA, IB= 15 mA
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Min
120 65 10 20 35 40 25 10 -
Typ
-
Max
2 2 5 120 0.5 1.1 15 80
Unit
nA µA nA V V
Tamb= 25°C Tamb= 150°C
hFE
DC Current Gain (*)
-
VCE(SAT) VBE(SAT) CC Ce
Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Collector Capacitance emitter Capacitance
V V pF pF
IE= 0 ,VCB= 10 V f = 1MHz IC= 0 ,VEB= 0.5 V f = 1MHz
(*) Pulse conditions : tp < 300 µs, δ =2%.
2|3 24/09/2012 COMSET SEMICONDUCTORS
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N2102
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm) min max 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02
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A B C D E F G H J K L
8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42°
48°
Pin 1 : Pin 2 : Pin 3 : Case :
Emitter Base Collector Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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24/09/2012 COMSET SEMICONDUCTORS
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