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2N2102 Dataheets PDF



Part Number 2N2102
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description Silicon Planar Epitaxial NPN transistor
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current www.DataSh.

  2N2102   2N2102


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NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current www.DataSheet.net/ Value 65 120 80 7 1 1 5 -65 to 200 Unit V V V V A W °C Total Power Dissipation Junction Temperature Storage Temperature range Tamb= 25°C Tcase= 25°C THERMAL CHARACTERISTICS Symbol RthJ-c Rthj-a Ratings Thermal Resistance, Junction-case thermal resistance from junction to ambient in free air Value 35 175 Unit °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N2102 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCBO VCEO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) Test Condition(s) VCB= 60 V IE= 0 VEB= 5 V, IC= 0 IC= 100 µA, IE= 0 IC= 30 mA, IB= 0 IC= 10 µA, VCE= 10 V IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V IC= 1 A, VCE= 10 V IC= 150 mA, IB= 15 mA IC= 150 mA, IB= 15 mA www.DataSheet.net/ Min 120 65 10 20 35 40 25 10 - Typ - Max 2 2 5 120 0.5 1.1 15 80 Unit nA µA nA V V Tamb= 25°C Tamb= 150°C hFE DC Current Gain (*) - VCE(SAT) VBE(SAT) CC Ce Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Collector Capacitance emitter Capacitance V V pF pF IE= 0 ,VCB= 10 V f = 1MHz IC= 0 ,VEB= 0.5 V f = 1MHz (*) Pulse conditions : tp < 300 µs, δ =2%. 2|3 24/09/2012 COMSET SEMICONDUCTORS Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N2102 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 www.DataSheet.net/ A B C D E F G H J K L 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42° 48° Pin 1 : Pin 2 : Pin 3 : Case : Emitter Base Collector Collector Revised August 2012             Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.     www.comsetsemi.com 24/09/2012 COMSET SEMICONDUCTORS [email protected] 3|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ .


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