BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification Hi...
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2
NPN SILICON
TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage
Ratings
www.DataSheet.net/
Value
BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
Unit
V V V A A Watts
Collector-Base Voltage
60 90 140 60 100 200 10
6 3
Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25°
87.5 200 -65 to +200
°C
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s) BDY23, 180T2
Min Typ Mx Unit
60 90 140 60 100 200 -
1.0 mA V V
VCEO(BR)
IC=50 mA, IB=0
BDY24, 181T2 BDY25, 182T2
V(BR)CBO
Collector-Base Breakdown Voltage (*) Collector-Emitter Cutoff Current
BDY23, 180T2
IC=3 mA VCE=60 V VCE=90 V VCE=140 V
www.DataSheet.net/
BDY24, 181T2 BDY25, 182T2 BDY23 BDY24 BDY25 BDY23, 180T2 BDY24, ...
