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SIC779 Dataheets PDF



Part Number SIC779
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Integrated DrMOS Power Stage
Datasheet SIC779 DatasheetSIC779 Datasheet (PDF)

SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 delivers up to 40 A continuous output current and operates from an input voltage range of 3 V to 16 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V t.

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SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 delivers up to 40 A continuous output current and operates from an input voltage range of 3 V to 16 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 12 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC779 incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals. The driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement. Adaptive dead time control also works to improve efficiency at all load points. The SiC779 has a thermal warning (THDN) that alerts the system of excessive junction temperature. The driver IC includes an enable pin, UVLO and shoot through protection. The SiC779 is optimized for high frequency buck applications. Operating frequencies in excess of 1 MHz can easily be achieved. The SiC779 is packaged in Vishay Siliconix high performance PowerPAK MLP 6 x 6 package. Compact co-packaging of components helps to reduce stray inductance, and hence increases efficiency. FEATURES • Industry benchmark Gen III MOSFETs with integrated Schottky diode • DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 93 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI • Pin compatible with DrMOS 6 x 6 version 4.0 • Tri-state PWM input function prevents negative output voltage swing • 5 V logic levels on PWM • MOSFET threshold voltage optimized for 5 V driver bias supply • Automatic skip mode operation (SMOD) for light load efficiency • Under-voltage lockout • Built-in bootstrap schottky diode • Adaptive deadtime and shoot through protection • Thermal shutdown warning flag • Low profile, thermally enhanced PowerPAK® MLP 6 x 6 40 pin package • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS Directive 2002/95/EC www.DataSheet.net/ APPLICATIONS • CPU and GPU core voltage regulation • Server, computer, workstation, game console, graphics boards, PC SiC779 APPLICATION DIAGRAM 5V VDRV GH V IN V IN VCIN SMOD Gate Driver DSBL# PWM PWM THDN Controller BOOT VSWH PHASE VO SiC779CD PGND CGND Figure 1 Document Number: 67538 S11-0703-Rev. B, 18-Apr-11 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GL SiC779 Vishay Siliconix ORDERING INFORMATION Part Number SiC779CD-T1-GE3 SiC779DB Package PowerPAK MLP66-40 Reference board ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Input Voltage Switch Node Voltage (DC) Drive Input Voltage Control Input Voltage Logic Pins Boot Voltage DC (referenced to CGND) Boot Voltage < 200 ns Transient (referenced to CGND) Boot to Phase Voltage DC Boot to Phase Voltage < 200 ns Ambient Temperature Range Maximum Junction Temperature Storage Junction Temperature Symbol VIN VSW VDRV VCIN VPWM, VDSBL#, VTHDN, VSMOD VBS VBS_PH TA TJ TSTG - 65 Min. - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 40 Max. 20 20 7 7 VCIN + 0.3 27 29 7 9 125 150 150 260 °C V Unit Soldering Peak Temperature Note: a. TA = 25 °C and all voltages referenced to PGND = CGND unless otherwise noted. www.DataSheet.net/ Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Input Voltage Control Input Voltage Drive Input Voltage Switch Node Symbol VIN VCIN VDRV VSW_DC Min. 3 4.5 4.5 12 Typ. 12 Max. 16 5.5 5.5 16 V Unit Note: a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to PGND = CGND unless otherwise noted. THERMAL RESISTANCE RATINGS Parameter Maximum Power Dissipation at TPCB = 25 °C Maximum Power Dissipation at TPCB = 100 °C Thermal Resistance from Junction to Top Thermal Resistance from Junction to PCB Symbol PD_25C PD_100C Rth_J_TOP Rth_J_PCB Typ. Max. 25 10 15 5 Unit W °C/W www.vishay.com 2 Document Number: 67538 S11-0703-Rev. B, 18-Apr-11 Datasheet pdf - http://www.DataSheet4U.co.kr/ This document is subject to change without notice. THE PRODUCTS DESCRIBED HERE.


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