30N20

UNISONIC TECHNOLOGIES CO., LTD 30N20 30A, 200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.  FEATURES * RDS(ON) < 75mΩ @ VGS=10V, ID=15A * Low Gate Charge (Typical 60nC) * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30N20L-TA3-T 30N20G-TF2-T 30N20L-TF2-T 30N20G-TF2-T 30N20L-T47-T 30N20G-T47-T 30N20L-TQ2-T 30N20G-TQ2-T 30N20L-TQ2-R 30N20G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 TO-247 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-823.E 30N20 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed ID IDM 30 90 A A Avalanche Energy Single Pulsed EAS 640 mJ TO-220/TO-263 140 W Power Dissipation TO-220F2 PD 40 W TO-247 214 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings ...