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RD04HMS2

Mitsubishi Electric Semiconductor
Part Number RD04HMS2
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Features 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. ...
Published Nov 5, 2012
Datasheet PDF File RD04HMS2 PDF File


RD04HMS2
RD04HMS2


Features
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in ...



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