2N5911

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation Derate above 25oC TO-99 Tight Tracking Low Insertion Loss Good Matching PIN CONFIGURATION One Side 367mW 3.0mW/ oC Both Sides 500mW 4.0mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part CJ1 C S2 G1 D2 D1 G2 S1 Package Hermetic TO-99 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC 2N5911-12 X2N5912 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS BVGSS VGS(off) VGS IG IDSS gfs gfs gos goss Ciss Crss en NF Gate Reverse Current Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Curr...